rf & microwave transistors 800-960mhz base station applications .230 6lfl (m118) epoxy sealed . 800 - 960 mhz . 24 volts . efficiency 50% . common emitter . gold metallization . class ab linear operation . p out = 15 w min. with 8.0 db gain description the SD1423 is a gold metallization epitaxial silicon npn planar transistor using diffused emitter ballast resistors for high linearity class ab operation for cellular base station applications. the SD1423 is designed as a medium power output device or as the driver for the sd1424. pin connection branding SD1423 order code SD1423 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 48 v v ceo collector-emitter voltage 25 v v ces collector-emitter voltage 45 v v ebo emitter-base voltage 3.5 v i c device current 2.5 a p diss power dissipation 29 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 6 c/w SD1423 1. collector 3. emitter 2. base thermal data august 22, 1996 1/4
symbol test conditions va lu e unit min. typ. ma x. p out f = 9 60 mhz v cc = 24 v i cq = 75 ma 15 e e w p g f = 9 60 mhz v cc = 24 v i cq = 75 ma 8eedb h c f = 9 60 mhz v cc = 24 v i cq = 75 ma 45 50 e % c ob f = 1 mhz v cb = 24v e2024pf static symbol test conditions va lu e unit min. typ . ma x. bv cbo i c = 5 0ma i e = 0ma 48 50 e v bv ceo i c = 2 0ma i b = 0ma 25 30 e v bv ebo i e = 5ma i c = 0ma 3.5 4.0 e v i cbo v cb = 24v i e = 0ma e e 1.0 ma h fe v ce = 10v i c = 100ma 20 e 100 e dynamic typical performance p ower out put vs p ower inp ut freq. z in ( w )z cl ( w ) 900 mhz 1.30 + j 1.98 3.99 + j 5.55 930 mhz 1.42 + j 2.31 3.18 + j 4.97 960 mhz 1.45 + j 2.62 2.96 + j 4.07 p out = 15 w v ce = 75 ma i cq = 24 v impedance data electrical specifications (t case = 25 c) SD1423 2/4
test circuit c1, c2 :0.8 - 8.0pfgigatrim variable capacitor c3, c6, c7, c8 :100pf atc chip capacitor c4 : 10 m f, 63v electrolytic c5 : 0.1 m f capacitor ck06bx104k d1, d2 :SD1423 trasistors used as diodes l1, l3 :4 turn, #22 awg l2 : #22 awg, ferrite core q1: SD1423 bias transistor q2: SD1423 transistor under test r1 : 1.5 k w , 1/4w resistor r2 : 5k w 5% potentiometer board material: 3m teflon fiberglass er = 2.55, h = .030o all dimensions in mils unless otherwise specified test circuit dimensions SD1423 3/4
package mechanical data ref.: udcs doc. no.1010941 rev. b test circuit layout information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1996 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - SD1423 4/4
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